Fundamental Concepts of Spin-Orbit torque based Magnetic RAM
Spin orbit torque based magnetic random access memory (SOT-MRAM) are non-volatile memory devices which make use of spin based transport electronics named as spintronics. In such devices, capacitors in conventional memory devices are replaced by a trilayer structure called magnetic tunnel junction (MTJ). As spin is non-volatile, it overcomes the charge leakage associated with conventional …
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